ANALYSIS OF HIGH-RESISTIVITY SEMICONDUCTOR SPECIMENS IN AN ENERGY-COMPENSATED TIME-OF-FLIGHT ATOM PROBE

被引：24

作者：

MELMED, AJ ^{[1
]}

MARTINKA, M ^{[1
]}

GIRVIN, SM ^{[1
]}

SAKURAI, T ^{[1
]}

KUK, Y ^{[1
]}

机构：

[1] PENN STATE UNIV,UNIVERSITY PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.92757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：416 / 417

页数：2

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[3]

MELMED AJ, UNPUBLISHED

[4]

Muller E., 1974, PROG SURF SCI, V4, P1

[5]

MULLER EW, 1968, FIELD ION MICROSCOPY

[6] ATOM-PROBE FIM STUDIES OF BETA-SIC WHISKERS [J].

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KURODA, T .

SURFACE SCIENCE, 1978, 70 (01) :452-458

[7]

NG YJ, UNPUBLISHED

[8]

OHNO Y, 1978, SURF SCI, V75, P689, DOI 10.1016/0039-6028(78)90186-3

[9] PHOTO-ILLUMINATION EFFECT ON SILICON FIELD-ION MICROSCOPY [J].

SAKURAI, T ;

CULBERTSON, RJ ;

MELMED, AJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :626-628

[10] TOF ATOM-PROBE MASS-SPECTRA OF GAAS [J].

TSONG, TT ;

NG, YS ;

MELMED, AJ .

SURFACE SCIENCE, 1978, 77 (01) :L187-L192

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