INTERACTION OF HYDROGEN WITH CHEMICAL-VAPOR-DEPOSITION DIAMOND SURFACES - A THERMAL-DESORPTION STUDY

被引:18
作者
CHUA, LH
JACKMAN, RB
FOORD, JS
CHALKER, PR
JOHNSTON, C
ROMANI, S
机构
[1] UNIV OXFORD,PHYS CHEM LAB,OXFORD OX1 3QZ,ENGLAND
[2] UKAEA TECHNOL,DEPT SURFACE SCI & TECHNOL,HARWELL LAB B552,DIDCOT OX11 0RA,OXON,ENGLAND
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1994年 / 12卷 / 06期
关键词
D O I
10.1116/1.578932
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The interaction of hydrogen with a chemical vapor deposition (CVD) deposited polycrystalline film on Si(100), cleaned by heating to 1500 K, has been examined. No adsorption is observed unless prior activation with a hot filament is carried out. However atomic H thereby created is found to adsorb with a high sticking probability, subsequently desorbing in the temperature range 1100–1225 K. Etching of the diamond surface, producing gaseous methane and ethane is also seen. The reactivity patterns are rather similar to those observed on C(100) and C(lll) surfaces, suggesting these are suitable model substrates for the study of reaction mechanisms associated with CVD diamond growth. However, a major difference is also seen in that a mixture of hydrogen, silane, and disilane, with other minority species, is seen to evolve from the surface of the CVD diamond film at 1275 K when exposed to the reacting gas and is not detected from single-crystal diamond surfaces. The results indicate that this arises from the selective etching of Si present at grain boundaries in the deposited films. © 1994, American Vacuum Society. All rights reserved.
引用
收藏
页码:3033 / 3039
页数:7
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