HETEROEPITAXY OF BETA-FESI2 ON SI BY GAS-SOURCE MBE

被引：54

作者：

RIZZI, A ^{[1
]}

ROSEN, BNE ^{[1
]}

FREUNDT, D ^{[1
]}

DIEKER, C ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] UNIV KARLSRUHE, ELEKTRONENMIKROSKOPIE LAB, D-76128 KARLSRUHE, GERMANY

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.51.17780

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The gas-source molecular-beam epitaxy (GSMBE) of β-FeSi2 layers on Si(111) and Si(001) has been studied. Results from two different growth processes, depending on the choice of either SiH4 or Si2H6 as the silicon gas source, are discussed. Fe(CO)5 acts as the Fe source for the silicide growth in both processes. Concerning surface roughness, thickness uniformity, and substrate/overlayer interface sharpness, best growth temperatures are found to be from 450 to 550°C for both the SiH4 and Si2H6 GSMBE processes. In situ electron spectroscopy combined with transmission-electron-microscopy structural analysis allows the identification of the grown silicide phases; furthermore, a heavily p-type doped accumulation layer is found to form at the surface, as revealed by high-resolution electron-energy-loss spectroscopy. High defect optical absorption is measured below the edge region (Eg∼0.87) and compared with common semiconductor materials. The RT electrical properties as measured by Hall effect are shown to be masked by a contribution from the substrate. At 77 K the mobility and carrier concentration of the grown β-FeSi2 layers are μ∼2 cm2/V s and p∼2×1018 cm-3, respectively. © 1995 The American Physical Society.

引用

页码：17780 / 17794

页数：15

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