HALL MOBILITY OF ELECTRONS IN SPACE-CHARGE LAYER OF THIN FILM CDSE TRANSISTORS

被引：43

作者：

VANHEEK, HF

机构：

[1] Philips Research Laboratories, N.V. Philips' Gloeilampenfabrieken, Eindhoven

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 04期

关键词：

D O I：

10.1016/0038-1101(68)90028-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Field- and Hall-effect measurements were performed on CdSe polycrystalline films at temperatures between -150 and +90°C. The mobility increased with carrier concentration over two orders of magnitude. This can be explained by the polycrystalline film model. It will be shown that in such a model a relatively small number of traps in the barrier region can have a profound influence on the onset of the enhancement-type field-effect conduction and its temperature dependence. © 1968.

引用

页码：459 / &

共 16 条

[1] BORKAN H, 1963, RCA REV, V24, P153
[2] STRUCTURE OF CDS EVAPORATED FILMS IN RELATION TO THEIR USE AS ULTRASONIC TRANSDUCERS
FOSTER, NF
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 149 - +
[3] HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES
FOWLER, AB
HOCHBERG, F
FANG, F
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 427 - &
[4] DRIFT PHENOMENA IN CDSE THIN FILM FETS
KOELMANS, H
DEGRAAFF, HC
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (10) : 997 - &
[5] KOENIG SH, 1962, P INT C SEMICONDUCTO
[6] EFFECTIVE ELECTRON MASS IN CDSE
KUBO, S
ONUKI, M
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (07) : 1280 - &
[7] ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES
LEISTIKO, O
GROVE, AS
SAH, CT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (05) : 248 - +
[8] Many A., 1965, SEMICONDUCTOR SURFAC
[9] SURFACE MOBILITY OF HOLES IN THERMALLY OXIDIZED SILICON MEASURED BY THE FIELD EFFECT AND THE HALL EFFECT
MURPHY, NSJ
[J]. SURFACE SCIENCE, 1964, 2 : 86 - 92
[10] THEORY OF PHOTOCONDUCTIVITY IN SEMICONDUCTOR FILMS
PETRITZ, RL
[J]. PHYSICAL REVIEW, 1956, 104 (06): : 1508 - 1516

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