STATIC OPTOELECTRONIC CHARACTERISTICS OF SNO2-V2O5-P2O5-SI HETEROJUNCTIONS

被引：8

作者：

WINN, OH ^{[1
]}

FRANZ, SL ^{[1
]}

ANDERSON, RL ^{[1
]}

机构：

[1] SYRACUSE UNIV,PHYS ELECTR LAB,SYRACUSE,NY 13210

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.326286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dark and illuminated characteristics of SnO2/V 2O5 : P2O5/Si heterojunctions can be explained by considering the cell to consist of a Schottky barrier in the Si at the Si/glass interface in series with the resistance of the bulk V 2O5 : P2O5 glass. The series resistance is voltage, temperature, and illumination-intensity dependent. Space-charge-limited currents are found to be an unimportant conduction mechanism. The resistance of the amorphous glass layer precludes the use of these cells as practical solar-energy converters.

引用

页码：3758 / 3761

页数：4

共 10 条

[1] MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS [J].