VAPOR-PHASE GROWTH OF CDTE

被引：11

作者：

GOLACKI, Z ^{[1
]}

GORSKA, M ^{[1
]}

MAKOWSKI, J ^{[1
]}

SZCZERBAKOW, A ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90030-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：213 / 214

页数：2

共 11 条

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[2]

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[3]

BUCK P, 1980, J CRYSTAL GROWTH, V48, P23

[4] THERMAL ANNEALING PROCEDURE FOR REDUCTION OF 10.6 MU-M OPTICAL LOSSES IN CDTE [J].

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KIEFER, JE ;

KYLE, NR ;

WINSTON, HV .

MATERIALS RESEARCH BULLETIN, 1973, 8 (05) :523-531

[5]

KLIMKIEWICZ M, 1981, CRYST RES TECHNOL, V16, P175

[6]

Markov E. V., 1975, Inorganic Materials, V11, P1504

[7]

Markov E.V., 1971, IAN SSSR NEORG MATER, V7, P575

[8] CHEMICAL-TRANSPORT MECHANISMS IN CD-TE-H-I SYSTEM [J].

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ATTOLINI, G ;

PELOSI, C ;

ZUCCALLI, G .

JOURNAL OF CRYSTAL GROWTH, 1974, 21 (02) :227-234

[9] CHARACTERISTICS OF MSM-TYPE CDTE GAMMA-RAY DETECTOR FABRICATED FROM UNDOPED P-TYPE CRYSTALS [J].

SHOJI, T ;

TAGUCHI, T ;

OHBA, K ;

HIRATATE, Y .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 57 (02) :765-774

[10] VAPOR-PHASE GROWTH OF HG1-XCDXTE EPITAXIAL LAYERS [J].

VOHL, P ;

WOLFE, CM .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) :659-678

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