MICROWAVE PERFORMANCE OF A GA0.20IN0.80P/GA0.47IN0.53AS/INP HFET GROWN WITH MOVPE

被引：8

作者：

RORSMAN, N ^{[1
]}

KARLSSON, C ^{[1
]}

HSU, CC ^{[1
]}

WANG, SM ^{[1
]}

ZIRATH, H ^{[1
]}

机构：

[1] CHINESE UNIV HONG KONG,DEPT ELECTR ENGN,HONG KONG,HONG KONG

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 09期

关键词：

SEMICONDUCTOR DEVICE CHARACTERIZATION; FIELD EFFECT TRANSISTORS; SOLID-STATE MICROWAVE DEVICES; MICROWAVE TRANSISTORS;

D O I：

10.1049/el:19950517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have DC, RF, and noise characterised 0.15 mu M gate-length HFETs fabricated on a pseudomorphic Ga0.20In0.80P/Ga0.47In0.53As/InP material grown with MOVPE. The extrinsic transconductance is 640mS/mm. The maximum frequency of oscillation is 260GHz and the intrinsic transit frequency is 165GHz. The DC and RF performances of this HFET are comparable with InAlAs/InGaAs/InP HFETs. The drain breakdown voltage of this HFET is 50% higher than InAlAs/InGaAs/InP HFETs fabricated in the authors' laboratory.

引用

页码：734 / 735

页数：2

共 6 条

[1] W-BAND LOW-NOISE INALAS INGAAS LATTICE-MATCHED HEMTS [J].

CHAO, PC ;

TESSMER, AJ ;

DUH, KHG ;

HO, P ;

KAO, MY ;

SMITH, PM ;

BALLINGALL, JM ;

LIU, SMJ ;

JABRA, AA .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) :59-62

[2] INGAAS/INALAS HEMT WITH A STRAINED INGAP SCHOTTKY CONTACT LAYER [J].

FUJITA, SB ;

NODA, T ;

NOZAKI, CH ;

ASHIZAWA, Y .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (05) :259-261

[3] MICROWAVE PERFORMANCE OF A1INAS-GAINAS HEMTS WITH 0.2-MU-M AND 0.1-MU-M GATE LENGTH [J].

MISHRA, UK ;

BROWN, AS ;

ROSENBAUM, SE ;

HOOPER, CE ;

PIERCE, MW ;

DELANEY, MJ ;

VAUGHN, S ;

WHITE, K .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :647-649

[4] HIGH BREAKDOWN VOLTAGE INGAAS/INALAS HFET USING IN0.5GA0.5P SPACER LAYER [J].

SCHEFFER, F ;

HEEDT, C ;

REUTER, R ;

LINDNER, A ;

LIU, Q ;

PROST, W ;

TEGUDE, FJ .

ELECTRONICS LETTERS, 1994, 30 (02) :169-170

[5] PSEUDOMORPHIC N-INGAP/INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS FOR LOW-NOISE AMPLIFIERS [J].

TAKIKAWA, M ;

JOSHIN, K .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (08) :406-408

[6] PSEUDOMORPHIC GA0.2IN0.8P/GA-0.47,IN0.53AS/INP HEMT GROWN BY MOVPE USING TBP AND TBA [J].

YANG, YF ;

HSU, CC ;

YANG, ES .

ELECTRONICS LETTERS, 1994, 30 (22) :1894-1895

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