POSITRON-ANNIHILATION IN PURE AND DOPED GAAS AT LOW-TEMPERATURE

被引：16

作者：

KERR, DP

KUPCA, S

HOGG, BG

机构：

来源：

PHYSICS LETTERS A | 1982年 / 88卷 / 08期

关键词：

D O I：

10.1016/0375-9601(82)90672-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：429 / 431

页数：3

共 7 条

[1]

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[6] EFFECT OF DOPING ON POSITRON-ANNIHILATION IN GAAS [J].

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