GETTER EVAPORATION OF PURE THIN FILMS OF INDIUM ANTIMONIDE

[1] TRANSPORT PROPERTIES OF INDIUM ANTIMONIDE THIN FILMS [J]. PHYSICA STATUS SOLIDI, 1969, 33 (01): : 425 - +

[2] PREPARATION OF HIGH MOBILITY INSB THIN FILMS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 383 - &

[3] GALVANOMAGNETIC THIN FILM DEVICES [J]. RADIO AND ELECTRONIC ENGINEER, 1967, 34 (02): : 97 - &

[4] GUNTHER KG, 1966, USE THIN FILMS PHYSI, P213

[5] GUNTHER KG, 1962, COMPOUND SEMICONDUCT, V1, P313

[6] RELATED OPTICAL AND ELECTRICAL PROPERTIES OF THIN FILMS OF INDIUM ARSENIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (06) : 854 - &

[7] KOIKE R, 1964, JPN J APPL PHYS, V3, P191

[8] SHALLCROSS FV, 1967, RCA REV, V28, P569

[9] SINGLE CRYSTAL INSB THIN FILMS BY ELECTRON BEAM RE-CRYSTALLIZATION [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1069 - &

[10] THEUERER HC, 1965, T METALL SOC AIME, V233, P588

[1] TRANSPORT PROPERTIES OF INDIUM ANTIMONIDE THIN FILMS [J]. PHYSICA STATUS SOLIDI, 1969, 33 (01): : 425 - +

[2] PREPARATION OF HIGH MOBILITY INSB THIN FILMS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 383 - &

[3] GALVANOMAGNETIC THIN FILM DEVICES [J]. RADIO AND ELECTRONIC ENGINEER, 1967, 34 (02): : 97 - &

[4] GUNTHER KG, 1966, USE THIN FILMS PHYSI, P213

[5] GUNTHER KG, 1962, COMPOUND SEMICONDUCT, V1, P313

[6] RELATED OPTICAL AND ELECTRICAL PROPERTIES OF THIN FILMS OF INDIUM ARSENIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (06) : 854 - &

[7] KOIKE R, 1964, JPN J APPL PHYS, V3, P191

[8] SHALLCROSS FV, 1967, RCA REV, V28, P569

[9] SINGLE CRYSTAL INSB THIN FILMS BY ELECTRON BEAM RE-CRYSTALLIZATION [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1069 - &

[10] THEUERER HC, 1965, T METALL SOC AIME, V233, P588