STRUCTURAL CHARACTERIZATION OF ZN1-XCOXSE EPILAYERS ON GAAS(001)

被引：12

作者：

JONKER, BT ^{[1
]}

QADRI, SB ^{[1
]}

KREBS, JJ ^{[1
]}

PRINZ, GA ^{[1
]}

SALAMANCAYOUNG, L ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT CHEM & NUCL ENGN,COLLEGE PK,MD 20742

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576286

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1360 / 1365

页数：6

共 25 条

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[7] EPITAXIAL-GROWTH AND X-RAY STRUCTURAL CHARACTERIZATION OF ZN1-XFEXSE FILMS ON GAAS(001) [J].

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[9] MAGNETIC AND CRYSTALLOGRAPHIC CHARACTERIZATION OF ZN0.78FE0.22SE AND FESE FILMS ON GAAS (001) [J].

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[10] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF THE DILUTE MAGNETIC SEMICONDUCTOR ZN1-XFEXSE [J].

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