ANGLE-RESOLVED-PHOTOEMISSION STUDY OF THE ELECTRONIC-STRUCTURE OF GD(0001)

被引：24

作者：

VESCOVO, E ^{[1
]}

RADER, O ^{[1
]}

KACHEL, T ^{[1
]}

ALKEMPER, U ^{[1
]}

CARBONE, C ^{[1
]}

机构：

[1] BERLINER ELEKTRONENSPEICHERRING GESELLSCHAFT MBH, W-1000 BERLIN 33, GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.47.13899

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of thick (> 300 angstrom) single-crystal Gd(0001) layers on W(110) has been studied by angle-resolved-photoelectron spectroscopy. Photoemission spectra measured with photon energies between 30 and 60 eV show intense 4f emission at 8.3-eV binding energy and 5d 6s - derived valence-band states within 4 eV from the Fermi level. No other structure is observed in the 5-11-eV binding-energy region. The valence-band spectra show a surface state at GAMMABAR near the Fermi level and other higher-binding-energy features possibly related to states localized near the surface.

引用

页码：13899 / 13902

页数：4

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