SURFACE-CHARGE RANDOM-ACCESS MEMORY SYSTEM

被引：8

作者：

ENGELER, WE

TIEMANN, JJ

BAERTSCH, RD

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1972.1052888

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：330 / &

共 13 条

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[2] COHEN L, 1971, ELECTRONICS, V44, P69
[3] SURFACE-CHARGE TRANSPORT IN A MULTIELEMENT CHARGE-TRANSFER STRUCTURE
ENGELER, WE
TIEMANN, JJ
BAERTSCH, RD
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2277 - &
[4] ENGELER WE, 1971, IEEE T ELECTRON DEVI, VED18, P1125
[5] ENGELER WE, 1971, ISSCC DIG TECH PAPER, P164
[6] ENGELER WE, 1971, IEEE J SOLID STATE C, VSC 6, P306
[7] KOSONOCKY WF, 1971, ISSCC DIG TECH PAPER, P162
[8] KOSONOCKY WF, 1971, IEEE J SOLID STATE C, VSC 6, P314
[9] MATHERS HW, 1967, AFWLTRBE126 TECH REP, V1
[10] MICHON GJ, 1970, 70C293 GE INT REP