OPTICAL BAND-GAP OF THE FILLED TETRAHEDRAL SEMICONDUCTOR LIZNAS

被引：80

作者：

KURIYAMA, K ^{[1
]}

KATO, T ^{[1
]}

KAWADA, K ^{[1
]}

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.49.11452

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the optical band gap of the filled tetrahedral semiconductor LiZnAs [viewed as a hypothetical zinc-blende (ZnAs)- lattice partially filled with He-like Li+ interstitials]. The band-structure nature of LiZnAs is found to be direct with a forbidden gap of 1.51 eV at, 300 K. The fundamental absorption edge is shifted to the higher energy by 100 meV at 77 K. In the photoluminescence study at 12 K an emission associated with a donor-acceptor pair is observed at around 814 nm (1.52 eV), indicating that the estimated band gap is a reasonable value, but the band-edge emission is not found. We suggested that the larger band gap of LiZnAs, as compared to that of GaAs is attributed to the higher ionicity.

引用

页码：11452 / 11455

页数：4

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