FRACTIONAL STATES IN FEW-ELECTRON SYSTEMS

被引：16

作者：

HANSEN, W

SMITH, TP

LEE, KY

HONG, JM

KNOEDLER, CM

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.103018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed fractional quantization of very few electrons confined in a semiconductor quantum dot using capacitance spectroscopy. The number of electrons per dot varies from 0 to about 40 as a function of bias on the quantum capacitors. The capacitance spectra have clear minima at gate voltages and magnetic fields, where the filling factors are 1/3 and 2/3. These measurements may allow direct comparison with few-particle calculations.

引用

页码：168 / 170

页数：3

共 21 条

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