DAMAGE STRUCTURE OBTAINED BY CROSS-SECTIONAL OBSERVATION IN SILICON-CARBIDE IRRADIATED WITH HELIUM-IONS

被引：9

作者：

NAKATA, K ^{[1
]}

KASAHARA, S ^{[1
]}

SHIMANUKI, S ^{[1
]}

KATANO, Y ^{[1
]}

OHNO, H ^{[1
]}

KUNIYA, J ^{[1
]}

机构：

[1] JAPAN ATOM ENERGY RES INST,DEPT FUELS & MAT RES,TOKAI,IBARAKI 31911,JAPAN

来源：

JOURNAL OF NUCLEAR MATERIALS | 1991年 / 179卷

关键词：

D O I：

10.1016/0022-3115(91)90110-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The microstructural change due to He-ion irradiation has been studied by cross-sectional transmission electron microscope observation in hot-pressed SiC irradiated to 1 x 10(20) ions/m2 at 300 and 1023 K. Dot and loop-shaped defect clusters are formed between 0.74 and 1.20-mu-m in depth from the ion-bombarded surface, and the damage peak depth is 1.15-mu-m in the 1023 K irradiation. He bubbles, which are formed between 0.94 and 1.16-mu-m in depth, are aligned on the c-planes and along radiation-induced dislocations. In the 300 K irradiation, the amorphous zone is formed slightly behind the damage peak depth.

引用

页码：403 / 406

页数：4

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