HOLE SPIN RELAXATION IN INTRINSIC QUANTUM-WELLS

被引：36

作者：

BAYLAC, B ^{[1
]}

MARIE, X ^{[1
]}

AMAND, T ^{[1
]}

BROUSSEAU, M ^{[1
]}

BARRAU, J ^{[1
]}

SHEKUN, Y ^{[1
]}

机构：

[1] INST NATL SCI APPL,PHYS SOLIDES LAB,CNRS,URA 74,F-31077 TOULOUSE,FRANCE

来源：

SURFACE SCIENCE | 1995年 / 326卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(94)00743-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We observe a fast decay of the photoluminescence intensity in intrinsic quantum wells (QW), for excitation energies above the QW gap. This fast decay is interpreted as the result of the transfer of excitons from optically active states (angular momentum J = 1) to non-optically active (J = 2) ones; the transfer is driven by the spin relaxation of holes. This observation leads us to propose a method to measure directly the hole spin relaxation time in intrinsic quantum wells, independently of any other spin-flip mechanism. We determine then the dependence of the hole spin relaxation time versus the photogeneration energy in various lattice matched GaAs/AlGaAs and strained GalnAs/GaAs QW. The obtained results are essential in order to interpret the spin relaxation mechanism of holes in intrinsic quantum wells.

引用

页码：161 / 166

页数：6

共 20 条

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