SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS

被引：21

作者：

DALE, RS

RASTOMJEE, CS

POTTER, FH

EGDELL, RG

TATE, TJ

机构：

[1] UNIV OXFORD, INORGAN CHEM LAB, S PARKS RD, OXFORD OX1 3QR, ENGLAND

[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED, DEPT ELECT ENGN, LONDON SW7 2BT, ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷 / 1 -4 pt A期

关键词：

Antimony - Bismuth - Carbon monoxide - Electric resistance - Electron absorption - Ion implantation - Methane - Oxides - Photoemission - Semiconductor doping - Sensors - Thin films;

D O I：

10.1016/0169-4332(93)90458-N

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of SnO2 have been implanted with 90 keV Sb-121 and Bi-209 up to a dose of 3 x 10(16) ions/cm2. Sb causes a four orders of magnitude reduction in sheet resistance and introduces electrons into the Sn 5s conduction band: these electrons can be seen directly in UV photoemission spectra. Bi is a less effective dopant but improves the selectivity of the films toward CO relative to CH4 in gas-sensor applications.

引用

页码：359 / 362

页数：4

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