ROLE OF SURFACE TREATMENT IN FIELD EFFECT ANOMALY OF N-TYPE INSB AT HIGH MAGNETIC FIELDS

被引:14
作者
KAWAJI, S
GATOS, HC
机构
关键词
D O I
10.1016/0039-6028(67)90092-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:362 / &
相关论文
共 8 条
[1]   PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE [J].
GOBELI, GW ;
ALLEN, FG .
PHYSICAL REVIEW, 1965, 137 (1A) :A245-&
[2]  
HUFF H, IN PRESS
[3]   FIELD EFFECT ON MAGNETORESISTANCE OF N-TYPE INDIUM ANTIMONIDE [J].
KAWAJI, S ;
HUFF, H ;
GATOS, HC .
SURFACE SCIENCE, 1965, 3 (03) :234-&
[4]  
KINGSTON RH, 1956, SEMICONDUCTOR SUR ED, P55
[5]   IMPURITY CONDUCTION OF CLEANED GERMANIUM SURFACES AT LOW TEMPERATURES [J].
KOBAYASHI, A ;
ODA, Z ;
KAWAJI, S ;
ARATA, H ;
SUGIYAMA, K .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :37-42
[6]  
KUBO R, 1965, SOLID STATE PHYS, V17, P270
[7]  
Many A., 1965, SEMICONDUCTOR SURFAC
[8]  
SHRIEFFER JR, 1956, SEMICONDUCTOR SURFAC, P55