GROWING SURFACE WAVES IN A SEMICONDUCTOR IN PRESENCE OF A TRANSVERSE MAGNETIC FIELD

被引：41

作者：

KINO, GS

机构：

[1] Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 09期

关键词：

D O I：

10.1063/1.1652006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recent observations of growing carrier waves in InSb suggest a new type of interaction involving electrons and holes which leads to a growing surface wave. A theory is presented which shows that the wave has a phase velocity near the electron drift velocity, and in the presence of a transverse magnetic field is unstable with very large growth rates. © 1968 The American Institute of Physics.

引用

页码：312 / &