SURFACE PROFILE ANALYSIS BY HELIUM-3 ACTIVATION . OXYGEN IN SILICON

被引：18

作者：

LAMB, JF

LEE, DM

MARKOWIT.SS

机构：

来源：

ANALYTICAL CHEMISTRY | 1970年 / 42卷 / 02期

关键词：

D O I：

10.1021/ac60284a026

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：212 / &

共 10 条

[1] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J].

ARCHER, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) :619-622

[2] PREPARATION OF ISOTOPIC OXYGEN TARGETS FOR CHARGED PARTICLE ACTIVATION ANALYSIS [J].

LAMB, JF ;

LEE, DM ;

MARKOWIT.SS .

ANALYTICAL CHEMISTRY, 1970, 42 (02) :209-&

[3]

LAMB JF, 1968, 2 P C PRACT ASP ACT, P225

[4]

MAHONY JD, 1965, UCRL11780 LAWR RAD L

[5] ACTIVATION ANALYSIS FOR OXYGEN AND OTHER ELEMENTS BY HELIUM-3-INDUCED NUCLEAR REACTIONS [J].

MARKOWITZ, SS ;

MAHONY, JD .

ANALYTICAL CHEMISTRY, 1962, 34 (03) :329-&

[6] SENSITIVITIES FOR ACTIVATION ANALYSIS OF 15 LIGHT ELEMENTS WITH 18-MEV HELIUM-3 PARTICLES [J].

RICCI, E ;

HAHN, RL .

ANALYTICAL CHEMISTRY, 1967, 39 (07) :794-&

[7] THEORY AND EXPERIMENT IN RAPID SENSITIVE HELIUM-3 ACTIVATION ANALYSIS - HELIUM-3 REACTIONS AS NEUTRON SOURCES [J].

RICCI, E ;

HAHN, RL .

ANALYTICAL CHEMISTRY, 1965, 37 (06) :742-&

[8] RADIOACTIVATION ANALYSIS OF OXYGEN IN HIGH-PURITY SILICON BY IRRADIATION WITH ALPHA-PARTICLES [J].

SAITO, K ;

FURUKAWA, M ;

NOZAKI, T ;

CHENG, H ;

TANAKA, S .

INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1963, 14 (07) :357-&

[9]

STEWARD PG, 1968, UCRL18127 LAWR RAD L

[10] RANGES AND RANGE STRAGGLING OF TB149, AT, AND PO [J].

WINSBERG, L ;

ALEXANDER, JM .

PHYSICAL REVIEW, 1961, 121 (02) :518-&

← 1 →