APPLICATION OF SI MBE TO MICROWAVE HYPERABRUPT DIODES

被引：15

作者：

GOODWIN, CA

OTA, Y

机构：

[1] Bell Laboratories, Reading

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 11期

关键词：

D O I：

10.1109/T-ED.1979.19688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hyperabrupt impurity profiles were formed by the Si molecular beam epitaxy (MBE) technique. Thin Sb-doped n-type epitaxial layers grown on n+ substrates were used to successfully fabricate hyperabrupt varactor diodes. The characteristics of microwave diodes containing hyperabrupt profiles produced by a conventional ion-implantation and drive-in technique were compared with those having profiles “grown-in” by the MBE technique. The diodes made from Si-MBE films exhibited superior RF performance. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1796 / 1799

页数：4

共 7 条

[1]

HEIN VL, UNPUBLISHED

[2] CHARACTERIZATION OF NONLINEARITIES IN MICROWAVE DEVICES AND SYSTEMS [J].