PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543

[3] MAJORITY-CARRIER CAMEL DIODE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 63 - 65

[4] WOOD CEC, 1980, J APPL PHYS, V51

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (05) : 373 - 376

[2] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543

[3] MAJORITY-CARRIER CAMEL DIODE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 63 - 65

[4] WOOD CEC, 1980, J APPL PHYS, V51