FABRICATION OF Nb/AlOx/Nb TUNNEL JUNCTIONS USING FOCUSED ION BEAM IMPLANTED Nb PATTERNING (FINP) TECHNIQUE

被引：3

作者：

Akaike, H. ^{[1
]}

Fujimaki, A. ^{[1
]}

Takai, Y. ^{[1
]}

Hayakawa, H. ^{[1
]}

机构：

[1] Nagoya Univ, Fac Engn, Dept Elect, Chikusa Ku, Furo Cho, Nagoya, Aichi 46401, Japan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233937

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have applied the Focused ion beam Implanted Nb Patterning (FINP) technique to fabrication process of Nb/AIOx/Nb tunnel junctions. The essence of this technique is that Ga ion implanted layers in Nb films serve as a masking layer during reactive ion etching (RIE) in CF4 plasma. Uniform and reproducible patterns of 0.3 x 0.3 mu m(2) have been formed by this technique. The tunnel junction fabricated with a 60 keV ion beam had the quality parameter Vm of 48 mV, which indicates no degradation of junction characteristics by focused ion beam irradiation. We have also investigated the CF4 plasma etching characteristics of Ga ion implanted Nb films and have found that an improvement in the characteristics is achieved by lowering beam energy and raising CF4 gas pressure.

引用

页码：2187 / 2190

页数：4

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