EFFECTS OF INTERACTION OF SUBSTRATE, DEPOSIT AND VECTOR GAS DURING EPITAXIS OF ZNSE ON GAAS

被引：10

作者：

CHEVRIER, J ^{[1
]}

ETIENNE, D ^{[1
]}

SOONCKINDT, L ^{[1
]}

BRESSE, JF ^{[1
]}

BOUGNOT, G ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLIDES,F-34060 MONTPELLIER,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 38卷 / 03期

关键词：

D O I：

10.1016/0022-0248(77)90351-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：309 / 316

页数：8

共 21 条

[1] EPITAXIAL GROWTH OF ZNSE ON GAAS [J].

BACZEWSK.A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) :577-&

[2]

BJERKELAND H, 1972, PHYS NORV, V6, P139

[3] LUMINESCENCE IN HIGHLY CONDUCTIVE N-TYPE ZNSE [J].

BOULEY, JC ;

BLANCONNIER, P ;

HERMAN, A ;

GED, P ;

HENOC, P ;

NOBLANC, JP .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3549-3555

[4]

BUBE RH, 1968, PHYS REV, V110, P2077

[5]

Carslaw HS., 1965, HEAT CONDUCTION

[6] HETERO-EPITAXY OF ZNSE ON GAAS BY OPEN TUBE TRANSPORT [J].

CHEVRIER, J ;

GALIBERT, G ;

ETIENNE, D ;

BOUGNOT, G .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) :109-116

[7]

CHEVRIER J, 1971, THESIS MONTPELLIER

[8] PAIR SPECTRA AND EDGE EMISSION IN ZINC SELENIDE [J].

DEAN, PJ ;

MERZ, JL .

PHYSICAL REVIEW, 1969, 178 (03) :1310-&

[9] OPTICAL-PROPERTIES OF ZNSE HETEROJUNCTIONS ON GAAS [J].

ETIENNE, D ;

BOUGNOT, G .

THIN SOLID FILMS, 1976, 35 (03) :351-362

[10] PHOTOLUMINESCENCE OF ZINC SELENIDE [J].

ETIENNE, D ;

ALLEGRE, J ;

CHEVRIER, J ;

BOUGNOT, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (01) :279-286

← 1 2 3 →