KINETICS OF EPITAXIAL-GROWTH OF GAN USING GA, HCL AND NH3

被引：45

作者：

SHINTANI, A ^{[1
]}

MINAGAWA, S ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 22卷 / 01期

关键词：

D O I：

10.1016/0022-0248(74)90050-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

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页码：1 / 5

页数：5

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