TRANSPORT PARAMETERS OF HOT-ELECTRONS IN GAAS AT 300-K

被引:23
作者
GASQUET, D
DEMURCIA, M
NOUGIER, JP
GONTRAND, C
机构
来源
PHYSICA B & C | 1985年 / 134卷 / 1-3期
关键词
D O I
10.1016/0378-4363(85)90353-5
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:264 / 267
页数:4
相关论文
共 8 条
[1]  
BAREIKIS V, 1980, SOV PHYS SEMICOND+, V14, P847
[2]   DIFFUSION AND THE POWER SPECTRAL DENSITY AND CORRELATION-FUNCTION OF VELOCITY FLUCTUATION FOR ELECTRONS IN SI AND GAAS BY MONTE-CARLO METHODS [J].
FAUQUEMBERGUE, R ;
ZIMMERMANN, J ;
KASZYNSKI, A ;
CONSTANT, E ;
MICROONDES, G .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1065-1071
[3]  
GASQUET D, 1981, NBS SPEC PUBL, V614, P305
[4]  
GASQUET D, 1985, 8TH INT C NOIS PHYS
[5]  
HANDEL PH, 1981, SSE, V25, P541
[6]   ELECTRON-TRANSPORT PROPERTIES IN GAAS AT HIGH ELECTRIC-FIELDS [J].
POZELA, J ;
REKLAITIS, A .
SOLID-STATE ELECTRONICS, 1980, 23 (09) :927-933
[7]  
POZELA J, 1978, SSC, V27, P1077
[8]   TRANSPORT PROPERTIES OF GAAS [J].
RUCH, JG ;
KINO, GS .
PHYSICAL REVIEW, 1968, 174 (03) :921-+