THERMAL PROPERTIES OF VERY FAST TRANSISTORS

被引:105
作者
JOY, RC
SCHLIG, ES
机构
关键词
D O I
10.1109/T-ED.1970.17035
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:586 / &
相关论文
共 7 条
[1]   THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J].
CARRUTHERS, JA ;
GEBALLE, TH ;
ROSENBERG, HM ;
ZIMAN, JM .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215) :502-514
[2]  
Carslaw H.S., 1962, CONDUCTION HEAT SOLI
[3]  
DILL FH, 1968, IEEE J SOLID-ST CIRC, VSC3, P160
[4]  
HOLM R, 1958, ELECTRICAL CONTACTS
[5]   PHYSICAL PROBLEMS AND LIMITS IN COMPUTER LOGIC [J].
KEYES, RW .
IEEE SPECTRUM, 1969, 6 (05) :36-&
[6]  
SCHLIG ES, 1968, IEEE J SOLID STATE C, VSC 3, P271
[7]  
SPARKES JJ, 1958, P IRE, V46, P1305