EFFECTS OF INDIUM AND TIN OVERLAYERS ON THE PHOTOLUMINESCENCE SPECTRUM OF MERCURIC IODIDE

被引：12

作者：

JAMES, RB

BAO, XJ

SCHLESINGER, TE

ORTALE, C

CHENG, AY

机构：

[1] CARNEGIE MELLON UNIV,DEPT ELECT & COMP ENGN,PITTSBURGH,PA 15213

[2] EG&G ENERGY MEASUREMENTS INC,SANTA BARBARA OPERAT,GOLETA,CA 93116

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.345516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mercuric iodide (HgI2) crystals with semitransparent metal overlayers of indium and tin were characterized using low-temperature photoluminescence (PL) spectroscopy. The PL spectra were found to differ for points beneath the thin metal overlayers and points that were masked off during each deposition. The photoluminescence data were compared with PL measurements taken on HgI2 photodetectors with indium-tin-oxide (ITO) entrance electrodes. The similarities of the spectra for the HgI2 samples with In, Sn, and ITO conducting overlayers indicate that the regions in the ITO-contacted photodetectors with relatively poor photoresponses are associated with the interaction of indium or tin with the mercuric iodide substrate.

引用

页码：2571 / 2575

页数：5

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