LATTICE-PARAMETER VARIATION IN INP RELATED TO THE DOPANT ELEMENT AND DOPING LEVEL

被引：5

作者：

KNAUER, A ^{[1
]}

KRAUSSLICH, J ^{[1
]}

KITTNER, R ^{[1
]}

STASKE, R ^{[1
]}

BARWOLFF, A ^{[1
]}

机构：

[1] UNIV JENA,SEKT PHYS,O-6900 JENA,GERMANY

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1990年 / 25卷 / 04期

关键词：

D O I：

10.1002/crat.2170250417

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The variation of the lattice constant was determined across (001) InP wafers from 〈111〉 grown LEC INP: S and InP: Sn + Ga + As monocrystals. The variation correlates to the free carrier distribution. The enrichment of dopants results in lattice spacing in the crystal core (especially for InP: Sn + Ga + As), which occupy a larger region as dopant enrichment do. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：441 / 449

页数：9

共 17 条

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[2] THE INCORPORATION OF TIN IN INDIUM-PHOSPHIDE [J].