HIGH Q METAL STRIP SSBW RESONATORS USING A SAW DESIGN

被引：12

作者：

AVRAMOV, ID

机构：

[1] Institute of Solid State Physics, 1784 Sofia

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/58.63109

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

An experimental study of metal strip surface skimming bulk wave (SSBW) resonators using a surface acoustic wave (SAW) design is presented. Characteristics of SSBW and SAW resonators fabricated with the same photolithographic mask are compared and discussed. High Q low loss SSBW resonators are achieved using a conventional two-port SAW resonator design and taking special care of the distance L between both interdigital transducers (IDT), the metal thickness h/λ (λ — acoustic wavelength) and the finger-to-gap ratio. Best overall performance of the SSBW devices in this study is achieved at L = nλ/2 − λ/4, (compared with L = nλ/2 − λ/8 for SAW resonators), Á/λ = 1.6%, (compared with 2% for SAW) and finger-to-gap ratio close to 1. The best device fabricated shows an unloaded Q of 5820 and an insertion loss of 7.8 dB at 766 MHz. The SSBW resonant frequency shows a stronger dependence on the metal thickness than the SAW one. This problem, however, is readily solved by frequency trimming using a CF4 plasma etching technique. SSBW resonators can be trimmed by 0.2% down in frequency (compared with 0.05% for SAW) without affecting their performance. © 1990, IEEE

引用

页码：530 / 534

页数：5

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