TUNNELING MEASUREMENTS OF SYMMETRICAL-INTERFACE PHONONS IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES

被引：22

作者：

TURLEY, PJ ^{[1
]}

WALLIS, CR ^{[1
]}

TEITSWORTH, SW ^{[1
]}

LI, W ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.47.12640

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we report the results of extensive magnetotransport experiments on asymmetric GaAs/AlAs double-barrier structures that were specifically designed to possess large phonon-assisted tunneling currents. We find quantitative agreement between measured valley currents at liquid-helium temperature and calculations that include the effects of phonon localization using the dielectric-continuum model. The results demonstrate that (1) a major part of the valley current in these structures is due to phonon-assisted tunneling, and (2) symmetric-interface phonons and confined phonons in the GaAs well are the most important in phonon-assisted tunneling processes. Charge buildup in the GaAs well is found to shift current-voltage curves to higher voltages and to distort magnetic field versus applied voltage diagrams.

引用

页码：12640 / 12648

页数：9

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