METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF MANGANESE ARSENIDE FOR THIN-FILM MAGNETIC APPLICATIONS

被引：20

作者：

LANE, PA

COCKAYNE, B

WRIGHT, PJ

OLIVER, PE

TILSLEY, MEG

SMITH, NA

HARRIS, IR

机构：

[1] DRA,GREAT MALVERN WR14 3PS,WORCS,ENGLAND

[2] UNIV BIRMINGHAM,SCH MET & MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 143卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(94)90062-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thin films of the ferromagnetic material manganese arsenide (MnAs) have been grown for the first time by atmospheric pressure metalorganic chemical vapour deposition (MOCVD), using tricarbonylmethylcyclopentadienyl manganese (TCM) and arsine. A detailed study of the MnAs growth characteristics are presented together with the resulting magnetic and structural properties.

引用

页码：237 / 242

页数：6

共 16 条

[1] THE NON-MARTENSITIC DIFFUSIONLESS TRANSITION IN MANGANESE ARSENIDE AT ABOUT 40-DEGREES-C [J].

BASINSKI, ZS ;

PEARSON, WB .

CANADIAN JOURNAL OF PHYSICS, 1958, 36 (08) :1017-+

[2]

BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1

[3]

Bates LF, 1929, PHILOS MAG, V8, P714

[4]

Bates LF, 1934, PHILOS MAG, V17, P783

[5]

Cullity BD., 1972, INTRO MAGNETIC MAT

[6] THE ELECTRICAL CONDUCTIVITY OF MANGANESE ARSENIDE AND ANTIMONIDE [J].

FISCHER, G ;

PEARSON, WB .

CANADIAN JOURNAL OF PHYSICS, 1958, 36 (08) :1010-1016

[7]

HONDA K, 1910, ANN PHYS LPZ, V32, P1048

[8] EFFECT OF HIGH-PRESSURE AND HIGH MAGNETIC-FIELD ON MAGNETISM OF MNAS1-XSBX (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.3) [J].

IDO, H ;

YASUDA, S ;

KIDO, M ;

KIDO, G ;

MIYAKAWA, T .

JOURNAL DE PHYSIQUE, 1988, 49 (C-8) :167-168

[9]

LANE PA, UNPUB

[10]

Owen M, 1912, ANN PHYS-BERLIN, V37, P657

← 1 2 →