THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS

[1] HIGH ELECTRON MOBILITY IN ZINC SELENIDE THROUGH LOW-TEMPERATURE ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1204 - &

[2] PURIFICATION OF II-VI-COMPOUNDS BY SOLVENT EXTRACTION [J]. APPLIED PHYSICS LETTERS, 1962, 1 (03) : 53 - 54

[3] Aven M., 1973, Journal of Luminescence, V7, P195, DOI 10.1016/0022-2313(73)90067-7

[4] AVEN M, 1964, PHYS REV, V137, pA228

[5] EPITAXIAL GROWTH OF ZNSE ON GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) : 577 - &

[6] BENGAHEL D, 1979, PHYS STATUS SOLIDI A, V56, P99

[7] BENGAHEL D, 1979, PHYS STATUS SOLIDI A, V55, P203

[8] HIGH-CONDUCTIVITY HETERO-EPITAXIAL ZNSE FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 955 - 957

[9] BHARGAVA R, UNPUB

[10] DONOR-ACCEPTOR PAIR BANDS IN ZNSE [J]. PHYSICAL REVIEW B, 1979, 20 (06): : 2407 - 2419

[1] HIGH ELECTRON MOBILITY IN ZINC SELENIDE THROUGH LOW-TEMPERATURE ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1204 - &

[2] PURIFICATION OF II-VI-COMPOUNDS BY SOLVENT EXTRACTION [J]. APPLIED PHYSICS LETTERS, 1962, 1 (03) : 53 - 54

[3] Aven M., 1973, Journal of Luminescence, V7, P195, DOI 10.1016/0022-2313(73)90067-7

[4] AVEN M, 1964, PHYS REV, V137, pA228

[5] EPITAXIAL GROWTH OF ZNSE ON GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) : 577 - &

[6] BENGAHEL D, 1979, PHYS STATUS SOLIDI A, V56, P99

[7] BENGAHEL D, 1979, PHYS STATUS SOLIDI A, V55, P203

[8] HIGH-CONDUCTIVITY HETERO-EPITAXIAL ZNSE FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 955 - 957

[9] BHARGAVA R, UNPUB

[10] DONOR-ACCEPTOR PAIR BANDS IN ZNSE [J]. PHYSICAL REVIEW B, 1979, 20 (06): : 2407 - 2419