TRAPPING RATE OF POSITRONS IN DEFORMED LEAD OVER TEMPERATURE-RANGE 4-100 K

被引：5

作者：

RICEEVANS, P

CHAGLAR, I

ELKHANGI, F

机构：

来源：

PHYSICS LETTERS A | 1978年 / 64卷 / 05期

关键词：

D O I：

10.1016/0375-9601(78)90680-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：450 / 452

页数：3

共 22 条

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TRAFF, J ;

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PETERSEN, K .

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FRANK, W ;

SEEGER, A .

APPLIED PHYSICS, 1974, 3 (01) :61-66

[7] POSITRON LIFETIMES AND ANNIHILATION LINESHAPE IN CD AND AU FROM 4.2 K TO MELTING POINTS [J].

HERLACH, D ;

STOLL, H ;

TROST, W ;

METZ, H ;

JACKMAN, TE ;

MAIER, K ;

SCHAEFER, HE ;

SEEGER, A .

APPLIED PHYSICS, 1977, 12 (01) :59-67

[8] TRAPPING OF POSITRONS AT VACANCIES IN METALS [J].

HODGES, CH .

PHYSICAL REVIEW LETTERS, 1970, 25 (05) :284-&

[9] THERMALIZATION OF POSITRONS AND POSITRONIUM [J].

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STEWART, AT .

PHYSICAL REVIEW LETTERS, 1975, 34 (14) :852-855

[10]

MANTL S, 1976, 4TH P INT C POS ANN

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