ANNEALING PROPERTIES OF SI-ATOMIC-LAYER-DOPED GAAS

被引：5

作者：

YAMAUCHI, Y

MAKIMOTO, T

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.L1689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1689 / L1692

页数：4

共 10 条

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