EFFECTIVE MASSES OF ELECTRONS IN SILICON

被引：44

作者：

DEXTER, RN

LAX, B

KIP, AF

DRESSELHAUS, G

机构：

来源：

PHYSICAL REVIEW | 1954年 / 96卷 / 01期

关键词：

D O I：

10.1103/PhysRev.96.222

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：222 / 223

页数：2

共 6 条

[1] ANISOTROPY OF CYCLOTRON RESONANCE OF HOLES IN GERMANIUM
DEXTER, RN
ZEIGER, HJ
LAX, B
[J]. PHYSICAL REVIEW, 1954, 95 (02): : 557 - 558
[2] OBSERVATION OF CYCLOTRON RESONANCE IN GERMANIUM CRYSTALS
DRESSELHAUS, G
KIP, AF
KITTEL, C
[J]. PHYSICAL REVIEW, 1953, 92 (03): : 827 - 827
[3] DIRECTIONAL PROPERTIES OF THE CYCLOTRON RESONANCE IN GERMANIUM
LAX, B
ZEIGER, HJ
DEXTER, RN
ROSENBLUM, ES
[J]. PHYSICAL REVIEW, 1954, 93 (06): : 1418 - 1420
[4] PEARSON GL, 1954, IN PRESS PHYSICA
[5] CYCLOTRON RESONANCES, MAGNETORESISTANCE, AND BRILLOUIN ZONES IN SEMICONDUCTORS
SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1953, 90 (03): : 491 - 491
[6] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON
SMITH, CS
[J]. PHYSICAL REVIEW, 1954, 94 (01): : 42 - 49