LOW-TEMPERATURE SPECIFIC-HEAT OF NBSE3 - A REASSESSMENT

被引：13

作者：

BILJAKOVIC, K ^{[1
]}

LASJAUNIAS, JC ^{[1
]}

MONCEAU, P ^{[1
]}

机构：

[1] CNRS, CTR RECH TRES BASSES TEMP, F-38042 GRENOBLE, FRANCE

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.43.3117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The analysis of low-temperature specific-heat measurements of NbSe3 between 0.1 and 7 K reveals three contributions: a phonon term with a T2.93 law, a linear term 4T(erg g-1K-1) due to free carriers, and an extra contribution following a T0.74 law. Aging effects in the energy relaxation and the presence of low-energy excitations indicate that NbSe3, similar to other quasi-one-dimensional conductors, has a disordered ground state in its low-temperature Peierls state.

引用

页码：3117 / 3122

页数：6

共 29 条

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