REACTIVE COEVAPORATION SYNTHESIS AND CHARACTERIZATION OF SRTIO3 THIN-FILMS

被引：46

作者：

YAMAGUCHI, H

MATSUBARA, S

MIYASAKA, Y

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Miyamae-ku Kawasaki, 216

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9B期

关键词：

REACTIVE COEVAPORATION; CAPACITOR; DIELECTRIC CONSTANT; FERROELECTRIC THIN FILM;

D O I：

10.1143/JJAP.30.2197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrTiO3 thin films were prepared by the reactive coevaporation method, where the Ti and Sr metals were evaporated in oxygen ambient with an E-gun and K-cell, respectively. A uniform depth profile in composition was achieved by altering the Ti evaporation rate according to the Sr evaporation rate change. A typical dielectric constant of 170 was measured on films of 75 nm in thickness. The in-situ annealing in oxygen plasma reduced the leakage current.

引用

页码：2197 / 2199

页数：3

共 4 条

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[3] PENNEBAKER WB, 1969, IBM J RES DEV NOV, P686
[4] BARRIER LAYERS FOR REALIZATION OF HIGH CAPACITANCE DENSITY IN SRTIO3 THIN-FILM CAPACITOR ON SILICON
SAKUMA, T
YAMAMICHI, S
MATSUBARA, S
YAMAGUCHI, H
MIYASAKA, Y
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (23) : 2431 - 2433

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