INTERVALLEY SCATTERING IN N-TYPE GE FROM A HALL EFFECT EXPERIMENT TO HIGH PRESSURES

被引：11

作者：

FLETCHER, K

PITT, GD

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1971年 / 4卷 / 13期

关键词：

D O I：

10.1088/0022-3719/4/13/032

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1822 / +

页数：1

共 18 条

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[3] BRIDGMAN PW, 1952, P AM ACAD SCI, V81, P221
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[5] FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM
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[J]. PHYSICAL REVIEW, 1967, 160 (03): : 649 - +
[6] NEGATIVE DIFFERENTIAL MOBILITY OF ELECTRONS IN GERMANIUM - MONTE CARLO CALCULATION OF DISTRIBUTION FUNCTION, DRIFT VELOCITY AND CARRIER POPULATION IN (111) AND (100) MINIMA
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PAIGE, EGS
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (13): : 1801 - &
[7] Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment
Fitt, G. D.
Lees, J.
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4144 - 4160
[8] CONDUCTION BAND STRUCTURE OF GERMANIUM-SILICON ALLOYS
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[J]. PHYSICAL REVIEW, 1956, 104 (05): : 1278 - 1279
[9] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND
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NAKAYAMA, M
[J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &
[10] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290

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