MOLECULAR-BEAM EPITAXIALLY GROWN ZNSE(001) SURFACE STUDIED BY THE INSITU OBSERVATION OF RHEED INTENSITY

被引：8

作者：

OHISHI, M

SAITO, H

TORIHARA, H

FUJISAKI, Y

OHMORI, K

机构：

[1] Department of Applied Physics, Okayama University of Science, Okayama, 700

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 08期

关键词：

ZNSE/GAAS; MOLECULAR-BEAM EPITAXY; RHEED OSCILLATION; DESORPTION RATE; SURFACE TERRACE; SURFACE STOICHIOMETRY;

D O I：

10.1143/JJAP.30.1647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The desorption of Zn and Se atoms or molecules on the (001) surface of a ZnSe/GaAs epitaxial layer were studied by means of reflection high-energy electron diffraction (RHEED). The temporal behavior of the specular intensity observed from two azimuths, [110] and [110BAR], was well understood by taking the surface condition into consideration; i.e., the surface terrace is elongated toward the [110BAR] direction and excessively adsorbed Se molecules exist as well. We also confirmed that a higher-energy electron beam enhances the desorption of Se molecules and adatoms.

引用

页码：1647 / 1652

页数：6

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