RECRYSTALLIZATION OF SILICON-ON-SAPPHIRE BY CW AR LASER IRRADIATION - COMPARISON BETWEEN THE SOLID-PHASE AND THE LIQUID-PHASE REGIMES

被引：17

作者：

GOLECKI, I

KINOSHITA, G

GAT, A

PAINE, BM

机构：

[1] ROCKWELL INT,ELECTR RES CTR,ANAHEIM,CA 92803

[2] COHERENT ANNEALING CTR,PALO ALTO,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 10期

关键词：

D O I：

10.1063/1.91859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：919 / 921

页数：3

共 13 条

[1]

ALESTIG G, 1978, P INT C ION BEAM MOD, P211

[2]

GAT A, 1979, CW LASER ANNEALING I, P33

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GHEZ, RA ;

LAFF, RA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2103-2110

[4] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER [J].

GOLD, RB ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1256-1258

[5] IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SILICON-ON-SAPPHIRE BY ION-IMPLANTATION AND FURNACE REGROWTH [J].

GOLECKI, I ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1980, 23 (07) :803-806

[6]

HESS LD, 1979, LASER SOLID INTERACT, P496

[7]

HESS LD, 1980, LASER ELECTRON BEAM, P562

[8] CRYSTALLINE DISORDER REDUCTION AND DEFECT-TYPE CHANGE IN SILICON ON SAPPHIRE FILMS BY SILICON IMPLANTATION AND SUBSEQUENT THERMAL ANNEALING [J].

INOUE, T ;

YOSHII, T .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :64-66

[9] REGROWTH OF AMORPHOUS FILMS [J].

LAU, SS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1656-1661

[10] SOLAR FURNACE ANNEALING OF AMORPHOUS SI LAYERS [J].

LAU, SS ;

ALLMEN, MV ;

GOLECKI, I ;

NICOLET, MA ;

KENNEDY, EF ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :327-329

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