RESISTANCE NOISE NEAR THE ANDERSON TRANSITION

We discuss the results of 1/f noise measurements made on films of polycrystalline indium oxide and ZnO accumulation layers. In these systems, the amount of static disorder can be readily and reversibly changed by fine-tuning the stoichiometry, which gives one a convenient and unique method to study the sensitivity of the noise to changes in some transport parameters. We present detailed experimental evidence that rules out classical percolation phenomena as an explantation for the high noise level observed in these materials. We elaborate on a qualitative model given by Cohen et al. that ascribes the noise characteristics of these systems to an impending metal-insulator transition and dwell on some of its implications.