FIELD-INDUCED MODULATIONS OF REFRACTIVE-INDEX AND ABSORPTION-COEFFICIENT IN A GAAS ALGAAS QUANTUM-WELL STRUCTURE

被引：29

作者：

NAGAI, H

YAMANISHI, M

KAN, Y

SUEMUNE, I

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 17期

关键词：

D O I：

10.1049/el:19860605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：888 / 889

页数：2

相关论文

共 5 条

[1] MEASUREMENTS OF ELECTRIC-FIELD-INDUCED ENERGY-LEVEL SHIFTS IN GAAS SINGLE-QUANTUM-WELLS USING ELECTROREFLECTANCE [J].

ALIBERT, C ;

GAILLARD, S ;

BRUM, JA ;

BASTARD, G ;

FRIJLINK, P ;

ERMAN, M .

SOLID STATE COMMUNICATIONS, 1985, 53 (05) :457-460

[2] FREQUENCY CHIRPING OF EXTERNAL MODULATION AND ITS REDUCTION [J].

KOYAMA, F ;

IGA, K .

ELECTRONICS LETTERS, 1985, 21 (23) :1065-1066

[3]

SERAPHIN BO, 1972, SEMICONDUCT SEMIMET, V9, P8

[4] HIGH-SPEED OPTICAL MODULATION WITH GAAS/GAALAS QUANTUM WELLS IN A P-I-N-DIODE STRUCTURE [J].

WOOD, TH ;

BURRUS, CA ;

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :16-18

[5] ELECTRIC-FIELD-INDUCED REFRACTIVE-INDEX VARIATION IN QUANTUM-WELL STRUCTURE [J].

YAMAMOTO, H ;

ASADA, M ;

SUEMATSU, Y .

ELECTRONICS LETTERS, 1985, 21 (13) :579-580