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RADIATIVE RECOMBINATION IN TIN-DOPED GERMANIUM
被引:3
作者
:
HERGENROTHER, KM
论文数:
0
引用数:
0
h-index:
0
机构:
Northeastern University, Boston
HERGENROTHER, KM
FELDMAN, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Northeastern University, Boston
FELDMAN, JM
机构
:
[1]
Northeastern University, Boston
来源
:
JOURNAL OF APPLIED PHYSICS
|
1969年
/ 40卷
/ 05期
关键词
:
D O I
:
10.1063/1.1657981
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
Strong radiative recombination with 0.49 eV energy at 77°K is found in Ge containing Sn. It is proposed that this radiation is due to excitons bound to an isoelectronic Sn center. © 1969 The American Institute of Physics.
引用
收藏
页码:2323 / +
页数:1
相关论文
共 3 条
[1]
DEAN PJ, 1968, T METALL SOC AIME, V242, P384
[2]
ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE
THOMAS, DG
论文数:
0
引用数:
0
h-index:
0
THOMAS, DG
HOPFIELD, JJ
论文数:
0
引用数:
0
h-index:
0
HOPFIELD, JJ
[J].
PHYSICAL REVIEW,
1966,
150
(02):
: 680
-
&
[3]
THOMAS DG, 1966, 1966 P INT C PHYS SE, P265
←
1
→
共 3 条
[1]
DEAN PJ, 1968, T METALL SOC AIME, V242, P384
[2]
ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE
THOMAS, DG
论文数:
0
引用数:
0
h-index:
0
THOMAS, DG
HOPFIELD, JJ
论文数:
0
引用数:
0
h-index:
0
HOPFIELD, JJ
[J].
PHYSICAL REVIEW,
1966,
150
(02):
: 680
-
&
[3]
THOMAS DG, 1966, 1966 P INT C PHYS SE, P265
←
1
→