RADIATIVE RECOMBINATION IN TIN-DOPED GERMANIUM

被引:3
作者
HERGENROTHER, KM
FELDMAN, JM
机构
[1] Northeastern University, Boston
关键词
D O I
10.1063/1.1657981
中图分类号
O59 [应用物理学];
学科分类号
摘要
Strong radiative recombination with 0.49 eV energy at 77°K is found in Ge containing Sn. It is proposed that this radiation is due to excitons bound to an isoelectronic Sn center. © 1969 The American Institute of Physics.
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页码:2323 / +
页数:1
相关论文
共 3 条
  • [1] DEAN PJ, 1968, T METALL SOC AIME, V242, P384
  • [2] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE
    THOMAS, DG
    HOPFIELD, JJ
    [J]. PHYSICAL REVIEW, 1966, 150 (02): : 680 - &
  • [3] THOMAS DG, 1966, 1966 P INT C PHYS SE, P265