REDUCTION OF THE BARRIER HEIGHT OF SILICIDE/P-SI1-XGEX CONTACT FOR APPLICATION IN AN INFRARED IMAGE SENSOR

被引：42

作者：

KANAYA, H

HASEGAWA, F

YAMAKA, E

MORIYAMA, T

NAKAJIMA, M

机构：

[1] TSUKUBA COLL TECHNOL,TSUKUBA 305,JAPAN

[2] NATL SPACE DEV AGCY JAPAN,TSUKUBA 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 04期

关键词：

D O I：

10.1143/JJAP.28.L544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L544 / L546

页数：3

共 6 条

BEAN, JC ;

FELDMAN, LC ;

FIORY, AT ;

NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[2]

CAPONE B, 1978, P SOC PHOTO-OPT INS, V156, P120

[3]

Kimata M., 1987, 1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition, P110

PEOPLE, R .

PHYSICAL REVIEW B, 1985, 32 (02) :1405-1408

[5]

TATUMI T, 1987, APPL PHYS LETT, V50, P1234

[6]

YUTANI N, 1978, 1987 IEEE IEDM WASH, P124