ELECTRON-OPTICAL-PHONON SCATTERING RATES IN A RECTANGULAR SEMICONDUCTOR QUANTUM WIRE

被引:115
作者
KIM, KW
STROSCIO, MA
BHATT, A
MICKEVICIUS, R
MITIN, VV
机构
[1] USA, RES OFF, RES TRIANGLE PK, NC 27709 USA
[2] WAYNE STATE UNIV, DEPT ELECT & COMP ENGN, DETROIT, MI 48202 USA
关键词
D O I
10.1063/1.350275
中图分类号
O59 [应用物理学];
学科分类号
摘要
One-dimensional electron-optical-phonon interaction Hamiltonians in a rectangular quantum wire consisting of diatomic polar semiconductors are derived under the macroscopic dielectric continuum model. The scattering rates calculated in a GaAs square quantum wire show that when the quantum wire is free-standing in vacuum, the interaction by the surface-optical phonon modes is very strong and may dominate over other scattering processes, especially with dimensions of about 100 angstrom or less. When the wire is embeded in a polar semiconductor (AlAs to be specific), the scattering rates by the confined longitudinal-optical modes as the wire dimension shrinks. A considerable decrease in the total scattering rate for optical phonons as a result of simple reduction in dimensionality is not observed in this study.
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页码:319 / 325
页数:7
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