PREPARATION AND DIELECTRIC AND ELECTROOPTIC PROPERTIES OF BI4TI3O12 FILMS BY ELECTRON-CYCLOTRON RESONANCE PLASMA SPUTTERING DEPOSITION

被引：21

作者：

MASUDA, Y

BABA, A

MASUMOTO, H

GOTO, T

MINAKATA, M

HIRAI, T

机构：

[1] TOHOKU UNIV,INST MAT RES,AOBAKU,SENDAI,MIYAGI 980,JAPAN

[2] TOHOKU UNIV,INST ELECT COMMUN,AOBAKU,SENDAI,MIYAGI 980,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 9B期

关键词：

FERROELECTRIC; BI4TI3O12; LAYER STRUCTURE; ELECTRON CYCLOTRON RESONANCE; BREWSTER ANGLE; REFRACTIVE INDEX; EPITAXIAL GROWTH;

D O I：

10.1143/JJAP.30.2212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline and epitaxal films of a layer-structured ferroelectric Bi4Ti3O12 in perovskite phases have been deposited on sapphire substrates by ECR plasma sputtering using a sintering ceramic target. The substrate temperature higher than 550-degrees-C is necessary to grow Bi4Ti3O12 films in the perovskite phase without post-thermal annealing. Bi4Ti3O12 films were epitaxially grown on C, A and R surfaces of a sapphire single crystal. Refractive indices of Bi4Ti3O12 films were determined from measurements of the Brewster angle, and the dielectric constant was measured at 1 kHz using an ADEX-221A LCR meter.

引用

页码：2212 / 2215

页数：4

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