SCALING ON THE MOBILITY THRESHOLD IN ULTRA-THIN CESIUM FILMS

被引:1
作者
ASTRAKHARCHIK, EG [1 ]
机构
[1] KAPITZA PHYS PROBLEMS INST,MOSCOW 142092,RUSSIA
关键词
D O I
10.1088/0953-8984/5/32/020
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The dependence of resistance upon thickness and temperature has been calculated for a thin continuous metal film. For a thickness near that of a monolayer, quantum corrections to conductivity are of the order of the classical conductivity itself, making a film behave like a semiconductor. Computed dependences have a striking resemblance to experimental data obtained on quench-condensed alkali metal films.
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页码:5929 / 5932
页数:4
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