ARSENIC IMPLANTATION INTO GAAS - A SOI TECHNOLOGY FOR COMPOUND SEMICONDUCTORS

被引：13

作者：

LILIENTALWEBER, Z

NAMAVAR, F

CLAVERIE, A

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

[2] CNRS,CEMES,F-31055 TOULOUSE,FRANCE

来源：

ULTRAMICROSCOPY | 1993年 / 52卷 / 3-4期

关键词：

D O I：

10.1016/0304-3991(93)90075-9

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Solid-phase epitaxial regrowth of As+-implanted GaAs has produced As precipitates with the same structure and orientation relationship as has been observed in annealed GaAs layers grown at low temperature by molecular-beam epitaxy. The presence of these precipitates was revealed by transmission electron microscopy. These layers appear to be semi-insulating. In order to obtain these results, implantation and annealing conditions need to be carefully selected. Annealing of implanted samples at 600 degrees C for 10, 20 and 30 min does not lead to the undulation of the sample surface. Therefore any device structures such as semiconductor-on-insulator can be grown on this regrown material.

引用

页码：570 / 574

页数：5

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