ANALYSIS AND MODELING OF TETRAETHOXYSILANE PYROLYSIS

被引：13

作者：

DELPERIER, B ^{[1
]}

VINANTE, C ^{[1
]}

MORANCHO, R ^{[1
]}

机构：

[1] INST GENIE CHIM,F-31078 TOULOUSE,FRANCE

来源：

JOURNAL OF ANALYTICAL AND APPLIED PYROLYSIS | 1988年 / 13卷 / 1-2期

关键词：

D O I：

10.1016/0165-2370(88)80054-8

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：141 / 149

页数：9

共 10 条

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CAPIO, CD .

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[2]

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[3]

HESS DW, 1985, REV CHEM ENG, V3, P174

[4] MODELING OF LOW-PRESSURE DEPOSITION OF SIO2 BY DECOMPOSITION OF TEOS [J].

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ENGL, WL .

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[5]

KEMLAGE BM, 1981, 8TH P INT C CHEM VAP, P418

[6] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION FOR VERY LARGE-SCALE INTEGRATION PROCESSING - REVIEW [J].

KERN, W ;

SCHNABLE, GL .

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[7]

PANNETIER G, 1964, CINETIQUE CHIMIQUE, P83

[8]

POWELL CF, 1966, VAPOR DEPOSITION, P391

[9] COMPARATIVE-STUDY OF PYROLYSES OF TETRAMETHYL DERIVATIVES OF SILICON, GERMANIUM, AND TIN USING A WALL-LESS REACTOR [J].

TAYLOR, JE ;

MILAZZO, TS .

JOURNAL OF PHYSICAL CHEMISTRY, 1978, 82 (08) :847-852

[10]

VINANTE C, 1987, 6TH P EUR C CVD, P42

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